Srabanti Chowdhury
Condensed Matter Physics · 2008–2018
A researcher in the Science corpus: 5 papers; trusts 4 researchers and is trusted by 5 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 67 citations into it; #757 of 1,948 by trust here, #581 by citations
- Electrical and Electronic Engineering — 59 citations into it; #6,595 of 16,539 by trust here, #7,062 by citations
- Electronic, Optical and Magnetic Materials — 54 citations into it; #854 of 2,886 by trust here, #1,907 by citations
Whom Srabanti Chowdhury trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Srabanti Chowdhury overall
- Yuhao Zhang
- Jie Hu
- Min-Chul Sun
- Tomás Palacios
- Man Hoi Wong
- Armin Dadgar
- Daniel Piedra
- Umesh K. Mishra
- B. Swenson
Papers from Srabanti Chowdhury's perspective
Ordered by how strongly the researchers Srabanti Chowdhury trusts endorse each paper. Same corpus, a different order for every researcher.
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates (IEEE Electron Device Letters)
- High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment (IEEE Electron Device Letters)
- AlGaN/AlN/GaN high-power microwave HEMT (IEEE Electron Device Letters)
- Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
- AlGaN/GaN current aperture vertical electron transistors with regrown channels
- Fundamentals of Power Semiconductor Devices
- A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
- Semiconductor Power Devices: Physics, Characteristics, Reliability
Their papers
- Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer (2008) — 139 citations
- CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion (2012) — 166 citations
- Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure (2013) — 182 citations
- Current status and scope of gallium nitride-based vertical transistors for high-power electronics application (2013) — 144 citations
- Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (2018) — 1,374 citations