Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB

By S. Keller, YiFeng Wu, G. Parish, Naiqian Ziang, J. J. Xu, B. Keller, Steven P. DenBaars, Umesh K. Mishra. 2001

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AlGaN/GaN HEMTs-an overview of device operation and applications (2002, background): “Typically, AlGaN/GaN HEMTs have demonstrated high-power densities of 6‐9 W/mm both on sapphire and SiC substrates [ 11 ]‐[13], approaching a one-order improvement over conventional HEMTs and confirming the extremely great potential of this device technology predicted by theory.”
The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors (2004, methodology): “Great improvements in the performance of AlGaN/GaN HEMTs have been achieved since then [2], [ 3 ].”
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs (2001, background): “The development of high power devices has been the result of improving the quality of the GaN and AlGaN layers, both structurally and with regard to unintentional impurity concentrations. These are described in detail in [ 4 ].”
AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$ (2010, background): “at least suppressed by using a UID GaN channel layer and by increasing the vertical spacing between the carbon-rich i-GaN buffer and the 2-DEG [9], [11], [17], [21].”
GaN-Based RF Power Devices and Amplifiers (2008, methodology): “Numerous teams have been developing the MOCVD and MBE techniques for growth of group-III nitride materials such as GaN, AlN, AlGaN, and InGaN [ 3 ]–[8].”