High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

By Huili Grace Xing, Y. Dora, Alessandro Chini, S. Heikman, Stacia Keller, Umesh K. Mishra. IEEE Electron Device Letters, 2004

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Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, background): “In recent years, multiple field plates and advanced dielectric passivation techniques [63]–[70] have been developed to alleviate the electric field at the gate edge and to modify/compensate the surface traps, leading to effectively suppressed surface-induced dynamic RON degradation.”
Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure (2007, background): “On the other hand, the uniformity of the electric-field distribution is increased by the dual-FP structure due to a multistep-FP structure [13], [14].”
1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon (2015, methodology): “Meanwhile, field plate technology was proven effective in boosting the breakdown voltage in both field effect transistors (FETs) [2] and SBDs [3].”
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates (2006, background): “Breakdown voltages as high as 900 V with low ON-resistance Ron have been demonstrated by using multiple field plates [2] and backside field plate [3].”
The 1.6-kV AlGaN/GaN HFETs (2006, methodology): “Insulated gate [5], [9] and multiple field-plate [7] designs were used to obtain VBR = 1300 and 900 V correspondingly, but no LGD dependence was reported.”