The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors
By Xinwen Hu, B. Choi, H. Barnaby, D. Fleetwood, peixiong zhao, Sungchul Lee, S. Shojah-Ardalan, R. Wilkins, Umesh K. Mishra, R. Dettmer. IEEE Transactions on Nuclear Science, 2004
132 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/d4e1dca660abb8c7ebf892c04a185f19b7658891
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In Condensed Matter Physics
In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors (2003, methodology): “by previous studies with similar devices [ 8 ].”