Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer
By Srabanti Chowdhury, B. Swenson, Umesh K. Mishra. IEEE Electron Device Letters, 2008
139 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/aad64eb87212bc7cb327b6266c5847a969443d0d
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In Condensed Matter Physics
- Tomás Palacios
- Yuhao Zhang
- Min-Chul Sun
- Srabanti Chowdhury
- Umesh K. Mishra
- Daniel Piedra
- B. Swenson
- Man Hoi Wong
In Electrical and Electronic Engineering
- Tomás Palacios
- Yuhao Zhang
- Min-Chul Sun
- Srabanti Chowdhury
- Umesh K. Mishra
- Daniel Piedra
- B. Swenson
- Man Hoi Wong
In Electronic, Optical and Magnetic Materials
- Tomás Palacios
- Yuhao Zhang
- Min-Chul Sun
- Srabanti Chowdhury
- Umesh K. Mishra
- Daniel Piedra
- B. Swenson
- Man Hoi Wong
Citations in the corpus
- CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion (2012, methodology): “implanted magnesium to create the CBL has been successfully used in the past to demonstrate a CAVET in both depletion and enhancement mode on a sapphire substrate [9].”
- Materials and processing issues in vertical GaN power electronics (2017, methodology): “Another critical issue related to the original CAVET structure is its intrinsic normally-on operation and poor pinch-off capability [38,46].”