Steven P. DenBaars

Condensed Matter Physics · 2000–2020

A researcher in the Science corpus: 69 papers; trusts 10 researchers and is trusted by 16 researchers here, as inferred from the citation graph.

Subfields

• Condensed Matter Physics — 286 citations into it; #219 of 1,948 by trust here, #5 by citations
• Electrical and Electronic Engineering — 141 citations into it; #5,869 of 16,539 by trust here, #1,914 by citations
• Atomic and Molecular Physics, and Optics — 128 citations into it; #2,860 of 7,135 by trust here, #426 by citations
• Materials Chemistry — 127 citations into it; #7,125 of 11,513 by trust here, #2,322 by citations
• Mechanics of Materials — 72 citations into it; #4,585 of 6,291 by trust here, #343 by citations
• Biomedical Engineering — 46 citations into it; #8,765 of 10,734 by trust here, #2,187 by citations

Whom Steven P. DenBaars trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. J. Speck
2. Shuji Nakamura
3. Umesh K. Mishra
4. Nelson Tansu
5. J. Piprek
6. Michael R. Krames
7. Pieter Dorenbos
8. Hongping Zhao
9. Stacia Keller
10. A. David

Who trusts Steven P. DenBaars overall

1. C. Licht
2. Umesh K. Mishra
3. ByShuji Nakamura
4. Srabanti Chowdhury
5. B. Baliga
6. M. Crawford

Papers from Steven P. DenBaars's perspective

Ordered by how strongly the researchers Steven P. DenBaars trusts endorse each paper. Same corpus, a different order for every researcher.

1. First-principles calculations for defects and impurities: Applications to III-nitrides
2. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
3. 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)
4. Nonpolar and Semipolar Group III Nitride-Based Materials
5. 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
6. Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses (IEEE Journal of Selected Topics in Quantum Electronics)
7. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
8. Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
9. AlGaN/AlN/GaN high-power microwave HEMT (IEEE Electron Device Letters)
10. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs (IEEE Electron Device Letters)

Their papers

• Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening (2004) — 1,305 citations
• AlGaN/AlN/GaN high-power microwave HEMT (2001) — 460 citations
• High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates (2006) — 400 citations
• Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition (2003) — 145 citations
• Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB (2001) — 182 citations
• High-power AlGaN/GaN HEMTs for Ka-band applications (2005) — 458 citations
• SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN (2000) — 140 citations
• Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs (2005) — 160 citations
• Consequences of Optimal Bond Valence on Structural Rigidity and Improved Luminescence Properties in SrxBa2–xSiO4:Eu2+ Orthosilicate Phosphors (2014) — 326 citations
• Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors (2006) — 667 citations
• Proxies from Ab Initio Calculations for Screening Efficient Ce3+ Phosphor Hosts (2013) — 175 citations
• Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak (2004) — 201 citations
• Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates (2005) — 205 citations
• N-polar GaN epitaxy and high electron mobility transistors (2013) — 200 citations
• High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap (2008) — 438 citations
• Prospects for LED lighting (2009) — 1,759 citations
• Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates (2008) — 165 citations
• Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays (2013) — 408 citations
• Heavy doping effects in Mg-doped GaN (2000) — 374 citations
• AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy (2001) — 322 citations