High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth

By Akito Kuramata, K. Koshi, Shinya Watanabe, Yuta Yamaoka, T. Masui, Shigenobu Yamakoshi. 2016

667 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “Among all these melt-growth methods, EFG method is deemed as the promising approach for β-Ga2O3 in consideration of achieving large size and high quality for future high-volume production.”
First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes (2017, methodology): “using conventional melt growth methods such as Czochralski, floating zone, or edge-defined film-fed growth [6]–[9].”
1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm2 (2020, background): “Moreover, advances in single crystalline β-Ga2O3 substrate synthesis, especially by the cost-competitive melt growth methods [5]–[9], provide great”
Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ $R_{\text{on,sp}}$ of up to 0.95 GW/cm2 (2020, background): “On top of the ultra-high critical electric-field (Ec) of ∼8 MV/cm [1], [2], which leads to a projected Baliga’s figure-of-merit (FOM) higher than those of SiC and GaN [1], β-Ga2O3 enjoys readily available melt-grown substrates [3], which enable highquality homoepitaxy as well as a potentially low-co”