Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV
By Zongyang Hu, K. Nomoto, Wenshen Li, N. Tanen, Kohei Sasaki, Akito Kuramata, Tohru Nakamura, Debdeep Jena, Huili Grace Xing. IEEE Electron Device Letters, 2018
222 citations recorded by the source corpus.
High-voltage vertical Ga<sub>2</sub>O<sub>3</sub> MISFETs are developed employing halide vapor phase epitaxial (HVPE) layers on bulk Ga<sub>2</sub>O<sub>3</sub> (001) substrates. The low charge concentration of ~10<sup>16</sup> cm<sup>−3</sup> in the n-drift region allows three terminal breakdown voltages to reach up to 1057 V without field plates. The devices operate in the enhancement mode (E-mode) with a threshold voltage of ~1.2–2.2 V, a current ON/OFF ratio of ~10<sup>8</sup>, an ON resistance of ~13–18 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega {}\cdot \text{cm}^{2}$ </tex-math></inline-formula>, and an output current of >300 A/cm<sup>2</sup>. This is the first report of high-voltage vertical Ga<sub>2</sub>O<sub>3</sub> transistors with E-mode operation, a significant milestone toward realizing Ga<sub>2</sub>O<sub>3</sub> based power electronics.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/72bf64972966e3daa43c49652c6da10e1f81c5d2
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Citations in the corpus
- Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage (2020, background): “down voltages and high power device Figure of Merit in Ga2O3 devices including lateral MOSFETs [5]–[12], FIN type vertical MOSFETs [13], and Schottky diodes [14]–[18].”
- Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ $R_{\text{on,sp}}$ of up to 0.95 GW/cm2 (2020, unknown): “6 kV [8], [9], alongside with”
- Field-Plated Lateral $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2 (2018, background): “2868444 1 kV [11], a high performance lateral MOSFET with 1.”
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “3) Vertical Transitor Solution: Except for the vertical Ga2O3 FinFETs we have mentioned above [19], [20], [179], Wong et al.”