2300V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers

By Jiancheng Yang, Fan Ren, Marko J. Tadjer, S. Pearton, Akito Kuramata. 2018

170 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4413e453d7ed3d364d70edae9a708bb4856e7d5e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. Zhuangzhuang Hu
2. Q. Feng
3. Jincheng Zhang
4. Chunfu Zhang
5. Kui Dang
6. Yuncong Cai
7. Zhaoqing Feng
8. Hong Zhou

Citations in the corpus

• Field-Plated Lateral $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2 (2018, background): “voltage (BV) [9], [10], a vertical MOSFET with record BV of”