High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3

By Jiancheng Yang, Shihyun Ahn, Fan Ren, S. Pearton, Soohwan Jang, Jihyun Kim, Akito Kuramata. 2017

169 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/f4b324efd9d14caec59d9774a5e9be5fdef9e784

How researchers see this paper

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In Electronic, Optical and Magnetic Materials

1. Uttam Singisetti
2. Ke Zeng

In Materials Chemistry

1. Uttam Singisetti
2. Ke Zeng

Citations in the corpus

• 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (2018, background): “High breakdown voltage/strength MOSFETs and diodes are also reported [7]–[13].”