Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

By Zongyang Hu, K. Nomoto, B. Song, M. Zhu, M. Qi, M. Pan, Xiang Gao, V. Protasenko, Debdeep Jena, Huili Grace Xing. 2015

188 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c4adc856973afa55a87897e3fcbad6df1bcd81ca

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Armin Dadgar
2. Yuhao Zhang
3. Tomás Palacios

In Electrical and Electronic Engineering

1. Armin Dadgar
2. Yuhao Zhang
3. Tomás Palacios
4. Debdeep Jena

Citations in the corpus

• Gallium nitride vertical power devices on foreign substrates: a review and outlook (2018, background): “The minority carrier lifetime in GaN was found to be very short (below 13 ns [25, 67, 68]), indicating negligible conduction modulation in today’s GaN devices.”
• Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (2018, methodology): “[24] Y. Zhang, M. Sun, D. Piedra, J. Hu, Z. Liu, Y. Liu, X. Gao K. Shepard, and T. Palacios, “1200 V GaN vertical fin power fieldeffect transistors,” in IEDM Tech.”