Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

By Zongyang Hu, K. Nomoto, Wenshen Li, Zexuan Zhang, N. Tanen, Q. Thieu, Kohei Sasaki, Akito Kuramata, Tohru Nakamura, Debdeep Jena and 1 more. Applied Physics Letters, 2018

140 citations recorded by the source corpus.

A high current density of 1 kA/cm2 is experimentally realized in enhancement-mode Ga2O3 vertical power metal-insulator field-effect transistors with fin-shaped channels. Comparative analysis shows that the more than doubled current density over the prior art arises from a larger transistor channel width; on the other hand, a wider channel also leads to a more severe drain-induced barrier lowering therefore premature transistor breakdown at zero gate-source bias. The observation of a higher current density in a wider channel confirms that charge trapping in the gate dielectric limits the effective field-effect mobility in these transistor channels, which is about 2× smaller than the electron mobility in the Ga2O3 drift layer. The tradeoff between output-current density and breakdown voltage also depends on the trap density. With minimal trap states, the output current density should remain high while breakdown voltage increases with decreasing fin-channel width.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a43211e59d50b437404dd22fcd66dad672fefde8

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In Electronic, Optical and Magnetic Materials

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Jianwu Sun
7. Renxu Jia
8. Yimen Zhang

In Materials Chemistry

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Jianwu Sun
7. Renxu Jia
8. Yimen Zhang

Citations in the corpus

• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “[16] Z. Hu et al., “Field-plated lateral β-Ga2O3 schottky barrier diode with high reverse blocking voltage of more than 3 kV and high DC power figure-of-merit of 500 MW/cm2,” IEEE Electron Device Lett., vol. 39, no. 10, pp. 1564–1567, Mar. 2018, doi: 10.1109/LED.2018.2868444.”