Daniele Ielmini

Electrical and Electronic Engineering · 2007–2021

A researcher in the Science corpus: 21 papers; trusts 55 researchers and is trusted by 39 researchers here, as inferred from the citation graph.

Subfields

Whom Daniele Ielmini trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Shimeng Yu
  2. U. Russo
  3. Rainer Waser
  4. H. Philip Wong
  5. A. Sawa
  6. Ximeng Guan
  7. Wolfgang Maass
  8. Andrea Leonardo Lacaita
  9. Doo Seok Jeong
  10. Keum Do Kim

Who trusts Daniele Ielmini overall

  1. Federico Nardi
  2. Geoffrey W. Burr
  3. H. Philip Wong
  4. R. Bruchhaus
  5. Shimeng Yu
  6. S. Larentis
  7. Andrea Padovani
  8. D. Sharma
  9. Simone Raoux
  10. Furqan Zahoor

Papers from Daniele Ielmini's perspective

Ordered by how strongly the researchers Daniele Ielmini trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices (IEEE Transactions on Electron Devices)
  2. Nanoionics-based resistive switching memories. (Nature Materials)
  3. Non-volatile resistive switching for advanced memory applications (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  4. In-datacenter performance analysis of a tensor processing unit
  5. Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  6. Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
  7. Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices (IEEE Transactions on Electron Devices)
  8. A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte (IEEE transactions on nanotechnology)
  9. Nanoscale memory elements based on solid-state electrolytes (IEEE transactions on nanotechnology)
  10. Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V (2007 IEEE International Electron Devices Meeting)

Their papers