Phase change materials in non-volatile storage

By Daniele Ielmini, Andrea Leonardo Lacaita. 2011

159 citations recorded by the source corpus.

After revolutionizing the technology of optical data storage, phase change materials are being adopted in non-volatile semiconductor memories. Their success in electronic storage is mostly due to the unique properties of the amorphous state where carrier transport phenomena and thermally-induced phase change cooperate to enable high-speed, low-voltage operation and stable data retention possible within the same material. This paper reviews the key physical properties that make this phase so special, the quantitative framework of cell performance, and the future perspectives of phase-change memory devices at the deep nanoscale.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/da11df4e70ccdeef5c65cee5249291785bdbc28c

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Citations in the corpus

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials (2013, background): “PCM’s also have a low electrical resistance in the crystalline phase, which may increase by many orders of magnitude in the amorphous phase, making them very useful for storage applications as non-volatile flash memories in integrated circuits (Ielmini and Lacaita, 2011).”