U. Russo

Electrical and Electronic Engineering · 2009

A researcher in the Science corpus: 3 papers; trusts 1 researcher and is trusted by 3 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 28 citations into it; #6,852 of 16,539 by trust here, #7,308 by citations
• Materials Chemistry — 9 citations into it; #6,540 of 11,513 by trust here, #9,147 by citations

Whom U. Russo trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Stefan K. Lai
2. Daniele Ielmini
3. Michael N. Kozicki
4. Keum Do Kim

Who trusts U. Russo overall

1. Daniele Ielmini
2. Shimeng Yu
3. Furqan Zahoor
4. H. Philip Wong
5. Tun Zainal Azni Zulkifli
6. Farooq Ahmad Khanday
7. R. Bruchhaus
8. Rainer Waser
9. Ilia Valov
10. Ximeng Guan

Papers from U. Russo's perspective

Ordered by how strongly the researchers U. Russo trusts endorse each paper. Same corpus, a different order for every researcher.

1. Non-volatile resistive switching for advanced memory applications (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
2. Current status of the phase change memory and its future (IEEE International Electron Devices Meeting 2003)
3. A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte (IEEE transactions on nanotechnology)
4. Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices (IEEE Transactions on Electron Devices)
5. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
6. 2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications (2007 IEEE International Electron Devices Meeting)
7. Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
8. Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
9. Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V (2007 IEEE International Electron Devices Meeting)
10. Electrical observations of filamentary conductions for the resistive memory switching in NiO films

Their papers

• Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices (2009) — 334 citations
• Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory (2009) — 310 citations
• Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices (2009) — 360 citations