Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices

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On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology (2012, background): “According to [31], the change of the local barrier height between two traps is proportional to the homogeneous component (i.”
Phase change memory technology (2010, background): “This effect is still not completely understood, but is attributed to a complex interplay between trapped charge, device current, and local electrical fields[45, 49].”
In-memory computing with resistive switching devices (2018, background): “The crystal-line phase has a low resistance because of the large concentration of carriers, while the amorphous phase has a high resistance due to its intrinsic semiconductor nature originating from Fermi level pinning at mid gap 24 .”
Resonant bonding in crystalline phase-change materials. (2008, background): “These are again ultimately related to the materials’ electronic state”
Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study (2009, methodology): “by thermally activated hopping is correspondingly reduced, resulting in an enhancement of conductivity [25].”