Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems

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Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM) (2011, background): “At the beginning of the reset process, because of the enhanced lateral electric field at the top of the filament, the filament first tends to laterally dissolve [27]; at some point, the diameter of the filament shrinks to zero at the top, and the reset occurs.”
Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory (2009, background): “conductive clusters get connected for increasing time, or new dendritic branches develop [25].”
Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors (2012, background): “Even if the neutrality assumption does not hold, the thermophoresis effect could still play the dominant role in defect transport given that the radial component of the electric field is much smaller than the axial component [57].”
Electrochemical metallization memories—fundamentals, applications, prospects (2011, background): “clearly observed in laterally arranged ECM cells [3, 30].”