Nanoscale memory elements based on solid-state electrolytes

By Michael N. Kozicki, Mira Park, M. Mitkova. IEEE transactions on nanotechnology, 2005

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Electrochemical metallization memories—fundamentals, applications, prospects (2011, background): “The exponential dependence of the SET speed on voltage reflects the exponential field-dependence of the underlying ionic motion, as many authors have pointed out [45, 46, 44, 42, 26].”
After Hard Drives—What Comes Next? (2009, background): “This causes a conductive bridge to form between the electrodes [36].”
Present and Future Non-Volatile Memories for Space (2010, background): “ploits the properties of some organic films or transition metal oxides that can be electrically switched from a high resistance to a low one and vice versa; and Conductive-Bridging RAM [10], in which an ion path is created or removed by electrical means.”
Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$ (2007, background): “be cycled well beyond conventional nonvolatile memory cells (> 10(12) cycles) [7], [8].”