Nanoionics-based resistive switching memories.

By Rainer Waser, Masakazu Aono. Nature Materials, 2007

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Memristor Applications for Programmable Analog ICs (2011, background): “Besides the application to nonvolatile memories [7], [8], researchers have suggested to build memristor-based ultrahigh-density Boolean”
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. (2010, background): “Among the many contenders for next-generation NVM based on a non-charge mechanism, resistance-switching random access memory (RRAM) has attracted increasing attention because of the advantages in its fabrication process as well as its outstanding device performanc”
Electrochemical metallization memories—fundamentals, applications, prospects (2011, background): “Today we distinguish three major types of ReRAM for which redox reactions and nanoionic transport processes play the key role in the switching mechanism [4, 5].”
Memristor-based neural networks (2013, background): “In2008, researchersfromHP-labscombinedtheinterestin the younger ﬁeld of nano-ionics [12, 13] with Chua’s concept.”