Ximeng Guan

Electrical and Electronic Engineering · 2011–2012

A researcher in the Science corpus: 5 papers; trusts 5 researchers and is trusted by 8 researchers here, as inferred from the citation graph.

Subfields

Whom Ximeng Guan trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Shimeng Yu
  2. H. Philip Wong
  3. Yi Wu
  4. Daniele Ielmini
  5. J. McPherson
  6. U. Russo
  7. Rainer Waser
  8. H. Akinaga

Who trusts Ximeng Guan overall

  1. Daniele Ielmini
  2. Shimeng Yu
  3. Furqan Zahoor
  4. Ee Wah Lim
  5. H. Philip Wong
  6. John Paul Strachan
  7. Tun Zainal Azni Zulkifli
  8. Razali Ismail
  9. S. Larentis
  10. Farooq Ahmad Khanday

Papers from Ximeng Guan's perspective

Ordered by how strongly the researchers Ximeng Guan trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices (IEEE Transactions on Electron Devices)
  2. Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance (International Electron Devices Meeting)
  3. Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity (International Electron Devices Meeting)
  4. An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation (IEEE Transactions on Electron Devices)
  5. On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology (IEEE Transactions on Electron Devices)
  6. Thermochemical description of dielectric breakdown in high dielectric constant materials
  7. Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism (2008 IEEE International Electron Devices Meeting)
  8. A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM (IEEE Electron Device Letters)
  9. Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses (IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.)
  10. Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices

Their papers