Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V

By K. Tsunoda, K. Kinoshita, H. Noshiro, Yuichi Yamazaki, T. Iizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano and 2 more. 2007 IEEE International Electron Devices Meeting, 2007

136 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/3ff7ca5a80af9c79a0a4d401dddc42ad0cfeebac

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Citations in the corpus

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices (2009, background): “In particular, NiO-based RRAM, which is optionally doped with Ti, has shown low voltage and relatively fast programming operations [5], [10].”
Resistive Random Access Memory (ReRAM) Based on Metal Oxides (2010, background): “As seen in Table 1, however, even in the unipolar mode, the current ReRAM cell can be operated by a voltage pulse faster than 100 ns [23], [ 43 ].”
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices (2009, background): “In unipolar RRAM, electrical pulses of the same polarity can switch the CFs on or off, resulting in the low resistive set state or high resistive reset state, respectively [3], [13].”
Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, background): “Figure 15 shows measured R ON (a) and RESET current I reset (b) as a function of drain/compliance current I D , from various sources in the literature 19 , 37 , 38 , 56 , 57 , 60 .”
Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory (2009, unknown): “density, and excellent scalability [1]–[5].”
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study (2012, methodology): “In particular, the set operation in the RRAM based on HfOx [8], NiO [4], [28], [29], and CuO [30] were controlled by an”
Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions (2009, background): “TMO can be formed by the percolation of defects, such as the migration of metal ions [7], [13] or oxygen vacancies [14], [ 15 ].”