Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

By Daniele Ielmini, Federico Nardi, C. Cagli. 2010

179 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/eb4f6dcb75a0615aa0bf961888f4e41a0aba57f5

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. J. Joshua Yang
3. R. Bruchhaus
4. Rainer Waser
5. Qiangfei Xia
6. Zhongrui Wang
7. Hao Jiang
8. Miao Hu

In Materials Chemistry

1. Rainer Waser
2. R. Bruchhaus
3. Daniele Ielmini

Citations in the corpus

• Thousands of conductance levels in memristors integrated on CMOS (2023, methodology): “Previously, a theoretical framework was established for the electronic RTN mechanism 33,34,44–46 , in which the electrical conduction of the incomplete conduction channels was frequently blocked by Coulomb repulsion when nearby defects trapped electrons and became negatively charged.”
• Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, methodology): “The R dependence was explained by the interaction between a bistable defect located at or close to the filament surface and filament carriers responsible for the current flow [32].”
• Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth (2011, background): “severe challenges need to be addressed and solved, including switching variability [2], reset current reduction [3]–[6], and reliability [7]–[9].”
• Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, background): “RRAM materials include HfO2 [41], NiO [38], and Cu-based CBRAM [112].”