Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth
By Daniele Ielmini. IEEE Transactions on Electron Devices, 2011
472 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/db6aa5ac25a45032718569acb5ebb7a9d507d263
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Daniele Ielmini
- H. Philip Wong
- Federico Nardi
- David C. Gilmer
- S. Larentis
- Simone Balatti
- Razali Ismail
- Ee Wah Lim
In Polymers and Plastics
- Federico Nardi
- David C. Gilmer
- H. Philip Wong
- Simone Balatti
- S. Larentis
- Andrea Padovani
- Luca Vandelli
- Luca Larcher
Citations in the corpus
- Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey (2015, background): “Compact modeling of resistive switching memory often consists of three inter-related modules, namely: (i) evolution of CF; (ii) conduction mechanism; and (iii) temperature dynamic evolution [15–18].”
- Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study (2012, methodology): “4 V across the RRAM device at the end of the set transition for a given time, irrespective of the compliance current IC used to control the resistance in the set state [18].”
- Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, methodology): “tion of RRAM was demonstrated by controlling the resistance through the maximum voltage Vstop during the reset [126], or the current compliance during the set [56, 126, 127].”
- In-memory computing with resistive switching devices (2018, background): “…stems from the physics of the device itself, which involves electron drift and capacitive charging in CMOS logic gates, while RRAM relies on the motion of ionic species, which requires a relatively large local electric field and temperature, caused by Joule heating, for their hopping migration 19 .”
- Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching (2015, methodology): “, the CF characteristics) typically considered in reported RRAM models, which are primarily focused on the switching (RESET and SET) operations [4]–[9].”