Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study

By Daniele Ielmini, D. Sharma, Simone Lavizzari, Andrea Leonardo Lacaita. IEEE Transactions on Electron Devices, 2009

154 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/c087ce5238ea60d87be9b9b327de045bbaf38e58

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. H. Philip Wong
3. Shimeng Yu
4. Ximeng Guan
5. Ilia Valov
6. Federico Nardi
7. David C. Gilmer
8. Jie Deng

In Materials Chemistry

1. H. Philip Wong
2. Daniele Ielmini
3. Jie Deng

In Polymers and Plastics

1. H. Philip Wong
2. Daniele Ielmini

Citations in the corpus

• In-memory computing with resistive switching devices (2018, background): “Drift can be alleviated by increasing the read current 96 , and adopting a core–shell structure of the memory cell, where the conduction path flows away from the core amorphous phase via a metallic shell layer 97 .”