Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

By U. Russo, D. Kamalanathan, Daniele Ielmini, Andrea Leonardo Lacaita, Michael N. Kozicki. IEEE Transactions on Electron Devices, 2009

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Synaptic electronics: materials, devices and applications (2013, background): “The insulating medium can be chalcogenide [64, 65], oxide [66, 67], amorphous silicon [68], or amorphous carbon [69].”
Electrochemical metallization memories—fundamentals, applications, prospects (2011, background): “, [48, 44] for Ag/Gex Sy /W cells) is that the retention of the ON-state improves as the value of RON decreases.”
Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth (2011, methodology): “where EA0 is the energy barrier for ion hopping, q is the elementary charge, V is the voltage across the insulating layer, and α is a barrier lowering coefficient [31]–[33].”
Cation-based resistance change memory (2013, background): “Most of the programming (or forming) voltage versus switching time (or φ versus ln ts) and current versus time plots for both gap-type atomic switches [27, 31, 73] and ECM/CBRAM cells [5, 80, 81] show a behaviour very similar to those reported in [70] and it is possible that nucleation is the rate l”
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling (2012, background): “in the direction of the electric field F by a factor αqV , where q is the elementary charge and α is a constant [10], [21], [22].”
Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM) (2011, methodology): “7-based CBRAM cells [22]–[24] to verify this model.”