Andrea Padovani
Electrical and Electronic Engineering · 2010–2018
A researcher in the Science corpus: 7 papers; trusts 1 researcher and is trusted by 1 researcher here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 100 citations into it; #14,072 of 16,539 by trust here, #5,009 by citations
- Polymers and Plastics — 20 citations into it
Whom Andrea Padovani trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Andrea Padovani overall
Papers from Andrea Padovani's perspective
Ordered by how strongly the researchers Andrea Padovani trusts endorse each paper. Same corpus, a different order for every researcher.
- Random Circuit Breaker Network Model for Unipolar Resistance Switching
- Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films (IEEE Electron Device Letters)
- Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity (International Electron Devices Meeting)
- High dielectric constant gate oxides for metal oxide Si transistors
- Metal oxide RRAM switching mechanism based on conductive filament microscopic properties (International Electron Devices Meeting)
- Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth (IEEE Transactions on Electron Devices)
- Vacancy and interstitial defects in hafnia
- A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates (2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.)
- Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks
- The effect of interfacial layer properties on the performance of Hf-based gate stack devices
Their papers
- Metal oxide RRAM switching mechanism based on conductive filament microscopic properties (2010) — 134 citations
- Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors (2016) — 812 citations
- Metal oxide resistive memory switching mechanism based on conductive filament properties (2011) — 461 citations
- Recommended Methods to Study Resistive Switching Devices (2018) — 574 citations
- Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching (2015) — 167 citations
- Grain boundary-driven leakage path formation in HfO2 dielectrics (2011) — 154 citations
- A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks (2011) — 191 citations