Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

By U. Russo, Daniele Ielmini, C. Cagli, A. L. Lacaita. IEEE Transactions on Electron Devices, 2009

360 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/5c7900a34767cd17afc86a62dde38ae4a7cd046a

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Citations in the corpus

A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations (2013, methodology): “In general, the temperature distribution can be obtained by solving the Fourier heat-flow equation [11]”
Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications (2020, methodology): “The Fourier steady-state heat equation describes this effect as [144]:”
Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, methodology): “The temperature profile along the CF cylindrical axis is shown at the extreme right [47].”
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. (2010, background): “In the fuse–antifuse mechanism, in which the interplay between the thermal effect and the redox reaction in the filament and its vicinity has a crucial role, metallic filaments are created through the insulator matrix during the electroforming process, and are fused as a result of Joule heating and ”
State of the art of metal oxide memristor devices (2016, background): “A thermal mapping investigation of the Reset transition of unipolar Pt/NiO/Pt anionic devices suggests that filament rupture occurs by heat-induced solid phase dissolution of oxygen species at very high current densities (strictly beyond the initially set compliance current) [12, 36].”
A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM (2010, background): “Because of the Joule heating, the local CF temperature can be raised up to its steady-state value in nanosecond timescale after the reset pulse is applied [7], which can be approximated as”
Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM) (2011, methodology): “In this model, the Joule heating effect is incorporated following the analysis in [ 32 ] as”
Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices (2009, methodology): “ing of the reset transition in the companion paper [18].”