Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

By U. Russo, Daniele Ielmini, C. Cagli, Andrea Leonardo Lacaita. IEEE Transactions on Electron Devices, 2009

334 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/3c1065c2819c82c88a7db0bdf3b225a71f49ae7d

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Citations in the corpus

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices (2009, methodology): “itself, using CF thermal and electrical parameters previously characterized [11].”
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, background): “switching has been explained by the purely thermal acceleration of redox transitions at the basis of CF connection/ disconnection in the gap region [1, 49, 50].”
Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, background): “The unipolar switching is explained on the basis of the filamentary mechanism and the local thermally induced oxidation and reduction of Ni-rich filaments and a dissolution mechanism of defects [40,72].”
Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications (2020, methodology): “ASU/Stanford [130]–[132] Physical electro-thermal model [135] Huang’s physical model [142] Filament dissolution model [143]–[145] Bocquet bipolar model [148]”
Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth (2011, methodology): “Solving (3) with boundary conditions T = T0 (room temperature) at the two electrodes at distance L leads to a maximum temperature along the CF equal to [12], [34]”
An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation (2011, background): “The set process, switching from high-resistance state (HRS) to low-resistance state (LRS), is attributed to the dielectric soft breakdown and creation of the CFs paths in the oxide matrix, while the reset process, switching from LRS to HRS, is attributed to the annihilation of the CFs by the Joule h”