Geoffrey W. Burr

Electrical and Electronic Engineering · 2000–2018

A researcher in the Science corpus: 10 papers; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 169 citations into it
• Materials Chemistry — 81 citations into it

Whom Geoffrey W. Burr trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Daniele Ielmini
2. Stefan K. Lai
3. Simone Raoux
4. R. Freitas
5. Matthias Wuttig
6. Winfried W. Wilcke
7. A. L. Lacaita
8. Matthew J. Breitwisch

Who trusts Geoffrey W. Burr overall

1. R. Freitas
2. Abu Sebastian
3. Shimeng Yu
4. M. Le Gallo
5. An Chen
6. Daniele Ielmini
7. Luiz E. Ramos
8. Winfried W. Wilcke
9. Simone Raoux
10. Shimin Chen

Papers from Geoffrey W. Burr's perspective

Ordered by how strongly the researchers Geoffrey W. Burr trusts endorse each paper. Same corpus, a different order for every researcher.

1. Scaling analysis of phase-change memory technology (IEEE International Electron Devices Meeting 2003)
2. Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology
3. AND T
4. Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials (IEEE Transactions on Electron Devices)
5. Storage-class memory: The next storage system technology (IBM Journal of Research and Development)
6. Phase-change random access memory: A scalable technology (IBM Journal of Research and Development)
7. Understanding the phase-change mechanism of rewritable optical media (Nature Materials)
8. Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation (2007 IEEE International Electron Devices Meeting)
9. OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications (International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224))
10. Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices

Their papers

• Phase-change random access memory: A scalable technology (2008) — 1,014 citations
• Neuromorphic computing using non-volatile memory (2017) — 1,066 citations
• Access devices for 3D crosspoint memorya) (2014) — 329 citations
• Phase change memory technology (2010) — 1,007 citations
• Overview of candidate device technologies for storage-class memory (2008) — 708 citations
• Equivalent-accuracy accelerated neural-network training using analogue memory (2018) — 974 citations
• Threshold field of phase change memory materials measured using phase change bridge devices (2009) — 146 citations
• Recent Progress in Phase-Change Memory Technology (2016) — 336 citations
• Improving accuracy by subpixel smoothing in the finite-difference time domain. (2006) — 434 citations
• Holographic data storage technology (2000) — 683 citations