S. Larentis
Electrical and Electronic Engineering · 2012–2016
A researcher in the Science corpus: 4 papers; trusts 4 researchers and is trusted by 1 researcher here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 40 citations into it; #14,371 of 16,539 by trust here, #10,154 by citations
- Cellular and Molecular Neuroscience — 9 citations into it; #2,503 of 2,998 by trust here, #2,076 by citations
- Polymers and Plastics — 9 citations into it
Whom S. Larentis trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Daniele Ielmini
- Shimeng Yu
- Rainer Waser
- Federico Nardi
- Stephan Menzel
- D. Kwon
- H. Philip Wong
- Ximeng Guan
- B. Radisavljevic
- David C. Gilmer
Who trusts S. Larentis overall
Papers from S. Larentis's perspective
Ordered by how strongly the researchers S. Larentis trusts endorse each paper. Same corpus, a different order for every researcher.
- Nanoionics-based resistive switching memories. (Nature Materials)
- Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM (2008 IEEE International Electron Devices Meeting)
- Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V (2007 IEEE International Electron Devices Meeting)
- Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory (IEEE Transactions on Electron Devices)
- Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges (Advances in Materials)
- Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films (IEEE Electron Device Letters)
- Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. (Nature Materials)
- Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance
- Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 (Nature Materials)
Their papers
- van der Waals Heterostructures with High Accuracy Rotational Alignment. (2016) — 702 citations
- Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers (2012) — 524 citations
- Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling (2012) — 423 citations
- Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study (2012) — 173 citations