D. Sharma

Electrical and Electronic Engineering · with Ielmini · 2007–2009

A researcher in the Science corpus: 2 papers; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom D. Sharma trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Daniele Ielmini
  2. Yuegang Zhang

Papers from D. Sharma's perspective

Ordered by how strongly the researchers D. Sharma trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices
  2. Electronic switching in phase-change memories (IEEE Transactions on Electron Devices)
  3. Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases
  4. Current status of the phase change memory and its future (IEEE International Electron Devices Meeting 2003)
  5. Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation (2007 IEEE International Electron Devices Meeting)
  6. Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories (IEEE Transactions on Electron Devices)
  7. Interfaces and defects of high-K oxides on silicon
  8. Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses
  9. A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte (IEEE transactions on nanotechnology)
  10. Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V (2007 IEEE International Electron Devices Meeting)

Their papers