Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications

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Graphene and Related Materials for Resistive Random Access Memories (2017, methodology): “[34] Apart from TMOs, a wide variety of materials have been proposed as switching media in RRAMs, including organic materials,([238]) polymers,([239]) perovskites([240]), GRMs([241]) and amorphous carbons.”
Memristive technologies for data storage, computation, encryption, and radio-frequency communication (2022, background): “Voltage pulses can change the resistance of the device, and the states are preserved without applying power (4).”
A Scalable Multicore Architecture With Heterogeneous Memory Structures for Dynamic Neuromorphic Asynchronous Processors (DYNAPs) (2017, background): “The use of on-chip heterogeneous memory structures makes this architecture ideal for exploiting the emerging memory structures based on nano-scale resistive memories [16], [48], [49].”
Physics for neuromorphic computing (2020, background): “…and control of nanoscale conductive filaments bridging two metallic electrodes separated by an insulating oxide such as tantalum or hafnium oxide 26 , phase transitions leading to conductance changes in materials such as chalcogenides (structural phase transition, caused by Joule effect) 27 or…”