Simone Raoux

Materials Chemistry · 2004–2014

A researcher in the Science corpus: 10 papers; trusts 8 researchers and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

• Materials Chemistry — 102 citations into it
• Electrical and Electronic Engineering — 91 citations into it; #16,502 of 16,539 by trust here, #3,169 by citations
• Electronic, Optical and Magnetic Materials — 29 citations into it
• Polymers and Plastics — 23 citations into it
• Biomedical Engineering — 16 citations into it
• Atomic and Molecular Physics, and Optics — 14 citations into it
• Ceramics and Composites — 14 citations into it

Whom Simone Raoux trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Matthias Wuttig
2. Daniele Ielmini
3. Stefan K. Lai
4. D. Lencer
5. W. Wełnic
6. Geoffrey W. Burr
7. Rob Wolters
8. Matthew J. Breitwisch
9. N. Yamada

Who trusts Simone Raoux overall

1. Geoffrey W. Burr
2. Sangyeun Cho
3. Ping Zhou
4. Onur Mutlu
5. Shivaram Venkataraman
6. Stuart E. Schechter
7. Daniele Ielmini
8. Matthew J. Breitwisch
9. An Chen
10. Benjamin C. Lee

Papers from Simone Raoux's perspective

Ordered by how strongly the researchers Simone Raoux trusts endorse each paper. Same corpus, a different order for every researcher.

1. Understanding the phase-change mechanism of rewritable optical media (Nature Materials)
2. Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases
3. Scaling analysis of phase-change memory technology (IEEE International Electron Devices Meeting 2003)
4. Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories (IEEE Transactions on Electron Devices)
5. AND T
6. Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials (IEEE Transactions on Electron Devices)
7. OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications (International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224))
8. Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation (2007 IEEE International Electron Devices Meeting)
9. Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology
10. Ultra-Thin Phase-Change Bridge Memory Device Using GeSb (International Electron Devices Meeting)

Their papers

• Phase-change random access memory: A scalable technology (2008) — 1,014 citations
• Phase change memory technology (2010) — 1,007 citations
• Monodisperse MFe2O4 (M = Fe, Co, Mn) nanoparticles. (2004) — 3,175 citations
• Crystallization properties of ultrathin phase change films (2008) — 202 citations
• Phase change materials and their application to random access memory technology (2008) — 151 citations
• Threshold field of phase change memory materials measured using phase change bridge devices (2009) — 146 citations
• Phase change materials and phase change memory (2014) — 487 citations
• Phase change materials and their application to nonvolatile memories. (2010) — 770 citations
• Phase Change Materials (2009) — 355 citations
• Phase change materials : science and applications (2009) — 178 citations