Thermochemical resistive switching: materials, mechanisms, and scaling projections

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Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study (2012, background): “In unipolar switching, the set and reset processes are interpreted in terms of local chemical reduction (e.g., NiO → Ni + O in the prototypical NiO-based unipolar RRAM [13]) and local chemical oxidation, respectively, where the local joule heating developed by the electrical pulse accelerates the ch”
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, background): “switching has been explained by the purely thermal acceleration of redox transitions at the basis of CF connection/ disconnection in the gap region [1, 49, 50].”
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling (2012, background): “In most cases, the resistance change in metal oxides is due to the formation of a conductive filament (CF), which is then subsequently dissolved and reconstructed through localized redox [3], [4] or ion-migration processes [2], [5]–[10].”
Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth (2011, background): “force based on metal–oxide reduction, which takes place at high temperatures because of the free energy for oxide formation being positive at sufficiently high temperature [43], [44].”