Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glasses

By Daniele Ielmini, Yuegang Zhang. 2007

187 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3a1dd63f36fe48b94b1dc873eae845482c11fdd1

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. Andrea Leonardo Lacaita
3. D. Sharma
4. Simone Lavizzari
5. H. Philip Wong
6. Rainer Waser

In Electronic, Optical and Magnetic Materials

1. Daniele Ielmini

In Materials Chemistry

1. Daniele Ielmini
2. Andrea Leonardo Lacaita
3. D. Sharma
4. Simone Lavizzari
5. H. Philip Wong

Citations in the corpus

• Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study (2009, background): “4 MV · cm−1, which are considered in our analysis, the potential barrier in (2) decreases linearly with the applied voltage, as a result of the small distance Δz between Coulombic wells (Δz = 3 nm in the figure) and the significant overlap between adjacent potential wells [21], [25].”