Recommended Methods to Study Resistive Switching Devices

By Mario Lanza, H. Philip Wong, Eric Pop, Daniele Ielmini, D. Strukov, B. Regan, Luca Larcher, M. A. Villena, J. Joshua Yang, L. Goux and 44 more. Advanced Electronic Materials, 2018

574 citations recorded by the source corpus.

Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8fa97199ab467f6f33a25e404517c07a6605302a

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In Electrical and Electronic Engineering

1. Abu Sebastian
2. M. Le Gallo
3. Wei Dang Lu
4. Meilin Liu
5. Husam N. Alshareef

In Materials Chemistry

1. Wei Dang Lu
2. Abu Sebastian
3. Meilin Liu
4. Deji Akinwande
5. Husam N. Alshareef
6. M. Le Gallo
7. S. Jiang

Citations in the corpus

• Memristive technologies for data storage, computation, encryption, and radio-frequency communication (2022, background): “Memristive effects have been reported in MIM nanocells made of many different materials ( 17 – 20 ) and often result from atomic rearrangements induced by electrical fields or thermal effects that create conductive regions in an insulator or semiconductor, or contrariwise, return these regions to…”