Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses
By Daniele Ielmini. 2008
328 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/1899d3435f2b5d41e3862bd526051527f67c0f93
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In Electrical and Electronic Engineering
- Daniele Ielmini
- R. Bruchhaus
- Rainer Waser
- Andrea Leonardo Lacaita
- D. Sharma
- Simone Lavizzari
- Simone Raoux
- Geoffrey W. Burr
In Materials Chemistry
- Daniele Ielmini
- Rainer Waser
- R. Bruchhaus
- Andrea Leonardo Lacaita
- D. Sharma
- Simone Lavizzari
- Simone Raoux
- Geoffrey W. Burr
In Polymers and Plastics
Citations in the corpus
- Phase change memory technology (2010, methodology): “This scaling behavior was explained with the impact ionization model previously developed to explain the threshold switching phenomenon[79].”
- Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study (2009, background): “the carriers, which is an important contribution to the activation energy according to the small-polaron hopping conduction model [20], [24], [27].”
- Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, methodology): “Increasing resistances ROFF were obtained in the Poole–Frenkel model assuming an increasing WAC according to available data [35] and a decreasing concentration nT of localized states (i.e., lattice defects).”