Non-volatile resistive switching for advanced memory applications

By An Chen, Sameer Haddad, Yi-Ching, Jean Wu, T. Fang, Zhida Lan, Steven Avanzino, S. Pangrle, M. Buynoski, Manuj Rathor and 5 more. IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2005

185 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/bf346ba9ecdcdea2080e3c7f92d7b79692bbe6e3

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In Electrical and Electronic Engineering

Citations in the corpus

After Hard Drives—What Comes Next? (2009, methodology): “Spansion demonstrated a 64 Kb memory test array with the Cu O MIM structure using 0.18 m technology in 2005 [39].”
Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap (2010, background): “The carrier transport of SET and RESET in the resistive memory is dominated by trap-related SCLC, and the on/off ratio increases with increasing trap levels in the insulator [6], [10].”
Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices (2009, background): “Several physical interpretations for the switching processes have been proposed, including trap charging in the dielectric [5], space-charge-limited conduction processes [16], ion conduction and electrodeposition [7], [13], Mott transition [17], and Joule heating [6].”
Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V (2007, methodology): “We used the 1T-1R configuration to control the second process and current compliances (ICOMP) were imposed by changing the gate voltage (VG) of the cell transistor [2, 3].”
Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism (2008, background): “[2]-[4], of which the redox pair of TaOx showed the smallest ΔG.”
Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM (2008, background): “Experiment The memory device consisting of TiN/TiOX/HfOX/TiN structure was fabricated on Ti/SiO2/Si substrate by alloying the TiN/Ti/HfO2/TiN stack layers.”
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices (2009, background): “An alternative explanation for resistance switching addresses carrier trapping/detrapping affecting space charge limited conduction in CuOx-based memory [14], [15].”
Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance (2010, methodology): “13, HVAR (High VSET after RESET) method [3] and ramping Vg method [7], can heal the RLow tail bit, but they are impractical for real application and may damage the memory device.”