Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

By Federico Nardi, S. Larentis, Simone Balatti, David C. Gilmer, Daniele Ielmini. IEEE Transactions on Electron Devices, 2012

173 citations recorded by the source corpus.

Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0ccca26b488669b1676b135b491589ff9aa0c2bc

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Cellular and Molecular Neuroscience

1. Daniele Ielmini
2. Federico Nardi
3. David C. Gilmer
4. Simone Balatti
5. S. Larentis

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. Federico Nardi
3. David C. Gilmer
4. Simone Balatti
5. S. Larentis
6. Rainer Waser
7. R. Bruchhaus
8. H. Philip Wong

Citations in the corpus

• Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling (2012, methodology): “In bipolar RRAM, the voltage for set and reset must have opposite polarities, thus evidencing the role of voltage-driven ion migration [2], [6], [7], [10], [13], [17].”
• Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, background): “A broad distribution of energy barrier was recently confirmed by ab initio calculations and attributed to the random network in the amorphous structure of HfOx [115].”