A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte

By Michael N. Kozicki, C. Gopalan, Muralikrishnan Balakrishnan, M. Mitkova. IEEE transactions on nanotechnology, 2006

207 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/53fb8ba23914a09c8e4ef68b58c4d1ecdb79baff

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Citations in the corpus

Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$ (2007, background): “The switching characteristics were very similar to those observed in chalcogenidebased memory cells [11].”
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices (2009, background): “filament shape, as shown in Fig. 6. A noncylindrical strongly asymmetric shape of the CF may result from several details of the set/forming operation (shape of the original electronic filament during threshold switching of NiO and contribution of ionic conduction between the electrodes [ 9 ]) and of”
Electrochemical metallization memories—fundamentals, applications, prospects (2011, unknown): “Gex Sy W: [9, 87, 14, 49, 88, 48, 44, 95, 16] W: [87] Gex Sey W: [9, 49, 72, 50, 15, 43] W: [87] Pt: [51] Ni: [49, 45, 94, 96] Ge–Te TiW: [90] TaN: [38] GST Mo: [91] As–S Au: [89] Znx Cd1−x S Pt: [39, 93] Cu2S Pt: [36, 46, 35] Ti: [41]a, [58]b Ta2O5 Pt: [85, 36, 60] Ru: [86] SiO2 Co: [84] W: [52, 92”
Nanoionics-based resistive switching memories. (2007, background): “Therefore, switches using a variety of solid electrolyte materials such as (Zn,Cd)S, WO 3 , and SiO 2 are being investigate”
Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices (2009, background): “Several physical interpretations for the switching processes have been proposed, including trap charging in the dielectric [5], space-charge-limited conduction processes [16], ion conduction and electrodeposition [7], [13], Mott transition [17], and Joule heating [6].”
Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM) (2011, background): “The solid-electrolyte materials can be chalcogenides, e.g., Cu2 S[ 8], Ag 2 S [9], Cu:GeSe [10], and Ag:GeSe [11]; oxides, e.g., SiO2 [12], WO3 [ 13 ], and Ta2O5 [14]; nitride, e.g., Si3N4 [15]; carbide, e.g., CuC [16]; or amorphous Si [17], which acts as the resistive switching medium in between th”