Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation

By Daniele Ielmini, Simone Lavizzari, D. Sharma, A. L. Lacaita. 2007 IEEE International Electron Devices Meeting, 2007

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Phase change memory technology (2010, background): “However, short term drift appears to be a random process, which can be expected to vary from cell to cell[89, 91, 211, 235].”
Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study (2009, background): “sured R as a function of time for a read-current scheme at Iread = 10 nA (left) or 1 μA (right), for both the set state and the reset state [10].”
Recent Progress in Phase-Change Memory Technology (2016, background): “wants to relax to lower energy states [133]–[135].”
In-memory computing on a photonic platform (2018, unknown): “The crystalline state, on the other hand, is stable and, thus, has a small or negligible resistance drift (35).”
Phase-Change Memory—Towards a Storage-Class Memory (2017, background): “created from the volume expansion induced by the phase transformation [74]–[76].”