Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

By S. Larentis, Federico Nardi, Simone Balatti, David C. Gilmer, Daniele Ielmini. IEEE Transactions on Electron Devices, 2012

423 citations recorded by the source corpus.

Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3192e900903c7d135ee633a9f349560f79465ed4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Cellular and Molecular Neuroscience

1. Daniele Ielmini
2. Federico Nardi
3. David C. Gilmer
4. H. Philip Wong
5. Simone Balatti
6. S. Larentis
7. Shimeng Yu

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. H. Philip Wong
3. Federico Nardi
4. David C. Gilmer
5. S. Larentis
6. Simone Balatti
7. Shimeng Yu
8. Ximeng Guan

Citations in the corpus

• In-memory computing with resistive switching devices (2018, background): “Pulse accumulation in nanoscale elements has been demonstrated in RRAM devices, where repeated pulses cause incremental reset transitions because of the gradual increase of the depleted gap disconnecting the conductive path 66 .”
• Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study (2012, result): “characterization results in this and the companion paper [21].”