Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories
By Daniele Ielmini, Andrea Leonardo Lacaita, D. Mantegazza. IEEE Transactions on Electron Devices, 2007
247 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/754ea1bb7a8e1aa4b375e5620d9136bcd757ee67
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Daniele Ielmini
- H. Philip Wong
- Simone Raoux
- Andrea Leonardo Lacaita
- D. Sharma
- Simone Lavizzari
- Geoffrey W. Burr
- Chung Hon Lam
In Materials Chemistry
- H. Philip Wong
- Daniele Ielmini
- Simone Raoux
- Andrea Leonardo Lacaita
- D. Sharma
- Simone Lavizzari
- Geoffrey W. Burr
- Chung Hon Lam
Citations in the corpus
- Phase-change random access memory: A scalable technology (2008, background): “about 30 ns [10], with both the original threshold voltage”
- In-memory computing with resistive switching devices (2018, background): “However, the resistance can drift in time as a result of the metastable nature of the amorphous state 95 .”
- Phase change memory technology (2010, background): “However, if this current pulse is switched off immediately after the threshold switching, the material returns to the highly resistive amorphous phase after about 30ns[50], with both the original threshold voltage Vt and RESET resistance recovering slowly over time[50, 51].”
- Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study (2009, background): “Previous experiments have shown that not only the resistance but also the threshold voltage VT in the reset state displays an increase with time [7], [9], [25].”