Joerg Appenzeller

Materials Chemistry · 2001–2022

A researcher in the Science corpus: 22 papers; trusts 23 researchers and is trusted by 36 researchers here, as inferred from the citation graph.

Subfields

• Materials Chemistry — 147 citations into it; #641 of 11,513 by trust here, #767 by citations
• Electrical and Electronic Engineering — 88 citations into it; #1,385 of 16,539 by trust here, #1,771 by citations
• Biomedical Engineering — 62 citations into it; #2,789 of 10,734 by trust here, #3,764 by citations
• Atomic and Molecular Physics, and Optics — 41 citations into it; #2,372 of 7,135 by trust here, #431 by citations

Whom Joerg Appenzeller trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Ali Javey
2. Phaedon Avouris
3. Jing Guo
4. Zhihong Chen
5. Yu-ming Lin
6. Joachim Knoch
7. K. K. Bhuwalka
8. Richard Martel
9. Mark S. Lundstrom
10. Claes Thelander

Who trusts Joerg Appenzeller overall

1. Phaedon Avouris
2. Joachim Knoch
3. Sheng Lin
4. Yu-ming Lin
5. Siyu Koswatta
6. Adrian M. Ionescu
7. Yong-Bin Kim
8. Alan C. Seabaugh
9. Hao Lu
10. Woo Young Choi

Papers from Joerg Appenzeller's perspective

Ordered by how strongly the researchers Joerg Appenzeller trusts endorse each paper. Same corpus, a different order for every researcher.

1. Carbon Nanotube Inter- and Intramolecular Logic Gates
2. Fabry - Perot interference in a nanotube electron waveguide (Nature)
3. Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors (IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.)
4. Ballistic carbon nanotube field-effect transistors (Nature)
5. A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors (IEEE Transactions on Electron Devices)
6. Logic Circuits with Carbon Nanotube Transistors (Science)
7. High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
8. Single-walled carbon nanotube electronics
9. Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+ Layer
10. Vertical tunnel field-effect transistor (IEEE Transactions on Electron Devices)

Their papers

• Carbon Nanotube Inter- and Intramolecular Logic Gates (2001) — 923 citations
• Carbon nanotubes as schottky barrier transistors. (2002) — 1,149 citations
• Ambipolar electrical transport in semiconducting single-wall carbon nanotubes. (2001) — 712 citations
• Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes (2002) — 626 citations
• Carbon nanotube electronics (2002) — 1,256 citations
• Controlling doping and carrier injection in carbon nanotube transistors (2002) — 596 citations
• Band-to-band tunneling in carbon nanotube field-effect transistors. (2004) — 809 citations
• High-performance dual-gate carbon nanotube FETs with 40-nm gate length (2005) — 136 citations
• High-performance carbon nanotube field-effect transistor with tunable polarities (2005) — 476 citations
• High performance multilayer MoS2 transistors with scandium contacts. (2013) — 2,347 citations
• The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors. (2005) — 639 citations
• Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design (2005) — 310 citations
• Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices (2007) — 285 citations
• Toward Nanowire Electronics (2008) — 333 citations
• Tunneling phenomena in carbon nanotube field‐effect transistors (2008) — 212 citations
• Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs (2010) — 210 citations
• Screening and interlayer coupling in multilayer MoS2 (2013) — 164 citations
• How to report and benchmark emerging field-effect transistors (2022) — 164 citations
• Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials (2015) — 190 citations
• Exfoliated multilayer MoTe2 field-effect transistors (2014) — 176 citations