Jing Guo

Materials Chemistry · IEEE Transactions on Electron Devices · 2002–2020

A researcher in the Science corpus: 27 papers; trusts 31 researchers and is trusted by 37 researchers here, as inferred from the citation graph.

Subfields

Materials Chemistry — 278 citations into it; #682 of 11,513 by trust here, #333 by citations
Electrical and Electronic Engineering — 134 citations into it; #2,789 of 16,539 by trust here, #1,414 by citations
Atomic and Molecular Physics, and Optics — 103 citations into it; #2,221 of 7,135 by trust here, #763 by citations
Biomedical Engineering — 56 citations into it; #2,312 of 10,734 by trust here, #3,269 by citations
Organic Chemistry — 11 citations into it
Physical and Theoretical Chemistry — 6 citations into it

Whom Jing Guo trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

Who trusts Jing Guo overall

Papers from Jing Guo's perspective

Ordered by how strongly the researchers Jing Guo trusts endorse each paper. Same corpus, a different order for every researcher.

Carbon Nanotube Inter- and Intramolecular Logic Gates
On the performance limits for Si MOSFETs: a theoretical study
Fabry - Perot interference in a nanotube electron waveguide (Nature)
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
Ballistic carbon nanotube field-effect transistors (Nature)
Carbon nanotubes as schottky barrier transistors. (Physical Review Letters)
A computational study of thin-body, double-gate, Schottky barrier MOSFETs
Theory of ballistic nanotransistors
Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors (IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.)
Influence of cultivation temperature on the ligninolytic activity of selected fungal strains

Their papers

One-Dimensional Electrical Contact to a Two-Dimensional Material (2013) — 2,922 citations
Ballistic carbon nanotube field-effect transistors (2003) — 2,960 citations
Atomically thin p-n junctions with van der Waals heterointerfaces. (2014) — 2,113 citations
Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics (2003) — 489 citations
Band gap of strained graphene nanoribbons (2009) — 190 citations
Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors (2004) — 153 citations
A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors (2003) — 315 citations
Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays (2004) — 537 citations
Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors. (2008) — 1,267 citations
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates (2002) — 890 citations
Theory of ballistic nanotransistors (2003) — 751 citations
N-Doping of Graphene Through Electrothermal Reactions with Ammonia (2009) — 2,046 citations
Degenerate n-doping of few-layer transition metal dichalcogenides by potassium. (2013) — 729 citations
On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit (2013) — 139 citations
A computational study of thin-body, double-gate, Schottky barrier MOSFETs (2002) — 175 citations
Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors (2011) — 437 citations
Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study (2007) — 155 citations
Effect of edge roughness in graphene nanoribbon transistors (2007) — 169 citations
Strain-induced indirect to direct bandgap transition in multilayer WSe2. (2014) — 678 citations
High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation (2020) — 279 citations