A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors

By Jing Guo, Supriyo Datta, Mark S. Lundstrom. IEEE Transactions on Electron Devices, 2003

315 citations recorded by the source corpus.

We performed a comprehensive scaling study of Schottky-barrier (SB) carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to SB carbon nanotube field-effect transistors (FETs) whose metal source-drain is attached to an intrinsic carbon nanotube channel. Ambipolar conduction is found to be an important factor that must be carefully considered in device design, especially when the gate oxide is thin. The channel length scaling limit imposed by source-drain tunneling is found to be between 5 nm and 10 nm, depending on the off-current specification. Using a large diameter tube increases the on-current, but it also increases the leakage current. Our study of gate dielectric scaling shows that the charge on the nanotube can play an important role above threshold.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1afa027d29b73d70afc1c3c8d764a68047680977

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Citations in the corpus

Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design (2005, background): “into the nanometer range while preserving long-channel type electrical characteristics [12].”
Graphene Frequency Multipliers (2009, background): “ductor heterostructures [22], organic single crystals [23], and some carbon nanotube transistors (CNTs) [24], [25], although graphene is the most suitable for high-frequency applications”
High-performance carbon nanotube field-effect transistor with tunable polarities (2005, background): “All these electrical characteristics of CNFETs have been studied previously, and detailed discussions can be found in [20], [24], and [25].”
Carbon Nanotube Electronics and Optoelectronics (2004, background): “as the SB becomes transparent, the non-equilibrium charge on the NT and the capacitance of the gate to NT may become important for the magnitude of the on-current and cannot be neglected [ 34 ].”
Carbon-nanotube-based voltage-mode multiple-valued logic design (2005, background): “principle of direct tunneling through a Schottky barrier at the source–channel junction [11].”
Carbon nanotube electronics (2002, background): “It has been demonstrated that most CNTFETs to date operates like non-conventional Schottky barrier transistors [19,20], which results in quite different device and scaling behaviors from the MOSFET-like transistors [21,22].”
Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study (2007, background): “Reducing the gate insulator thickness and the contact size results in thinner SBs and, therefore, larger on-current.”