High-performance dual-gate carbon nanotube FETs with 40-nm gate length
By Yu-ming Lin, Joerg Appenzeller, Zhihong Chen, Zhigang Chen, Huihang Cheng, Phaedon Avouris. IEEE Electron Device Letters, 2005
136 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/1b541739d27ba1600867c22057664a27cb4c2c10
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Biomedical Engineering
- Zhihong Chen
- Joerg Appenzeller
- Phaedon Avouris
- Siyu Koswatta
- Yu-ming Lin
- Joachim Knoch
- Dmitri E. Nikonov
- Mark S. Lundstrom
In Electrical and Electronic Engineering
- Joerg Appenzeller
- Joachim Knoch
- Siyu Koswatta
- Phaedon Avouris
- Yu-ming Lin
- Dmitri E. Nikonov
- Mark S. Lundstrom
- Zhihong Chen
In Materials Chemistry
- Joerg Appenzeller
- Phaedon Avouris
- Zhihong Chen
- Joachim Knoch
- Yu-ming Lin
- Mark S. Lundstrom
- Siyu Koswatta
- Dmitri E. Nikonov
Citations in the corpus
- Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs (2008, background): “Similar device structures with local high-k channel gating have already been experimentally demonstrated in the case of CNT-MOSFETs [25], [30], [42], [43].”
- A Graphene Field-Effect Device (2007, background): “In recent years, intriguing electrical properties have been found in carbon nanotubes (CNTs) [4].”
- Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design (2005, background): “2Details of the sample fabrication can be found elsewhere [14], [23].”