Claes Thelander
Electrical and Electronic Engineering · 2002–2013
A researcher in the Science corpus: 12 papers; trusts 4 researchers and is trusted by 6 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 50 citations into it; #5,984 of 16,539 by trust here, #2,481 by citations
- Biomedical Engineering — 47 citations into it; #3,893 of 10,734 by trust here, #1,140 by citations
- Atomic and Molecular Physics, and Optics — 17 citations into it; #3,575 of 7,135 by trust here, #886 by citations
Whom Claes Thelander trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Claes Thelander overall
- M. Law
- Joerg Appenzeller
- Magnus Borgström
- G. Yi
- D. Suyatin
- M. Björk
- J. Wallentin
- M. Larsson
- Lars Samuelson
- Joshua E. Goldberger
Papers from Claes Thelander's perspective
Ordered by how strongly the researchers Claes Thelander trusts endorse each paper. Same corpus, a different order for every researcher.
- High Performance Silicon Nanowire Field Effect Transistors
- Spin relaxation in InAs nanowires studied by tunable weak antilocalization
- Benchmarking nanotechnology for high-performance and low-power logic transistor applications (IEEE transactions on nanotechnology)
- Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species (Science)
- In search of "Forever," continued transistor scaling one new material at a time (IEEE transactions on semiconductor manufacturing)
- High performance 5nm radius Twin Silicon Nanowire MOSFET (TSNWFET) : fabrication on bulk si wafer, characteristics, and reliability (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
- One-dimensional heterostructures in semiconductor nanowhiskers
- Tunnel field-effect transistors as energy-efficient electronic switches (Nature)
- Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing (International Electron Devices Meeting)
- Steep-slope tunnel field-effect transistors using III–V nanowire/Si heterojunction (Symposium on VLSI Technology)
Their papers
- One-dimensional steeplechase for electrons realized (2002) — 622 citations
- Single-electron transistors in heterostructure nanowires. (2003) — 384 citations
- Electron transport in InAs nanowires and heterostructure nanowire devices (2004) — 139 citations
- Nanowire-based one-dimensional electronics (2006) — 634 citations
- One-dimensional heterostructures in semiconductor nanowhiskers (2002) — 541 citations
- Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate (2008) — 188 citations
- Nanowire resonant tunneling diodes (2002) — 394 citations
- Few-Electron Quantum Dots in Nanowires (2004) — 262 citations
- Spin relaxation in InAs nanowires studied by tunable weak antilocalization (2005) — 156 citations
- Sulfur passivation for ohmic contact formation to InAs nanowires (2007) — 185 citations
- High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors (2013) — 133 citations
- Semiconductor nanowires for 0D and 1D physics and applications (2004) — 161 citations