The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors.

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High-resolution electrohydrodynamic jet printing. (2007, background): “Figure 6 c shows typical transfer characteristics that indicate the expected p-channel behaviou”
Carbon-based electronics. (2007, background): “However, typically, carrier transport through the metal-CNT interface is dominated by quantum mechanical tunnelling through the Schottky barrier rather than thermally-activated — thermionic — emission over the Schottky barrie”
High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes. (2007, positive): “These mobilities are as high as ∼1,100 cm V s for L > 25 µ m , decreasing with L , likely owing to effects of contact”
High-performance dual-gate carbon nanotube FETs with 40-nm gate length (2005, background): “Compared with device (B), both our CNFET and the device (A) exhibit higher ON-state currents because of the larger nanotube diameter [6].”
Development of Carbon Nanotube-Based Sensors—A Review (2007, background): “who tested over one hundred single-walled CNT-based field effect transistors [45].”
Nanowire Transistor Performance Limits and Applications (2008, neutral): “fected by contact properties [26], [27].”
Carbon Nanotubes for High-Performance Electronics - Progress and Prospect (2008, positive): “To explore the impact of various contact materials on the CNFET performance, Chen et al. [ 32 ] have built around 100 nanotube devices with three different types of metal electrodes.”