High performance multilayer MoS2 transistors with scandium contacts.

By Saptarshi Das, Hong-Yan Chen, A. Penumatcha, Joerg Appenzeller. Nano letters (Print), 2013

2,347 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0433c54fd4437dd92e22a6af5e562338790e9a78

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In Electrical and Electronic Engineering

1. Yuchen Du
2. Mark C. Hersam
3. Han Liu
4. A. Neal
5. Peide D. Ye
6. Mengwei Si
7. H. Philip Wong
8. Vinod K. Sangwan

In Materials Chemistry

1. Mark C. Hersam
2. H. Philip Wong
3. Yuchen Du
4. Peide D. Ye
5. Han Liu
6. A. Neal
7. Filippo Giubileo
8. A. Di Bartolomeo

Citations in the corpus

• Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. (2014, methodology): “The net result is linear or electrically ohmic transport for ultrathin MoS2 FETs even with high work function metal contacts.(99) Systematic studies of various metal contacts in ultrathin”
• Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors (2014, neutral): “1).”
• Electrical characterization of 2D materials-based field-effect transistors (2020, methodology): “Finally, as shown in figure 9(d), φB,eff is plotted as a function of applied gate bias, and the actual SBH (φBn) can be determined by identifying the gate voltage at which the curve of φB,eff versusVGS deviates from its initial linear slope [34, 61].”